KM4216V256G-60

Description

The Samsung KM4216CN256 is a CMOS 256K x 16 bit Dual Port DRAM. It consists of a 256K x 16 dynamic random access memory (RAM) port and 512 X 16 static serial access memory (SRAM) port. The RAM and SRAM port operate asynchronously except during data transfer between the ports.

The RAM array consists of 512 bit rows of 8192 bits. It operates like a conventional 256K x 16 CMOS DRAM. The RAM port has a write per bit mask capability. Data may be written with New and Old Mask. The RAM port has a Fast Page mode access with Extended Data out, Byte/Word write operation and Block Write capabilities.

The SAM port consists of sixteen 512 bit high speed shift registers that are connected to the RAM array through a 8192 bit data transfer gate. The SAM port has serial read capability.

Data may be internally transferred from the RAM to SAM port using read, and programmable (Stop Register) Split Transfers. Refresh is accomplished by familiar DRAM refresh modes. The KM421 6CN256 supports RAS-only， Hidden, and CAS- before-RAS refresh for the RAM port. The SAM port does not require refresh.

All inputs and I/O's are T TL level compatible. All address lines and data inputs are latched on chip to simplifty system design. The outputs are unlatched to allow greater system flexibility.

Features

Dual port Architecture
256K X 16 bits RAM port
512 x 16 bits SAM port

Fast Page Mode with Extended data out
RAM Read, Write, Read-Modify-Write
Serial Read (SR)
Read / Real time read transfer (RT, RRT)
Split Read Transfer with Stop Operation (SRT)
Byte / Word Write Operation
8 Column Block Write (BW) and Write-per-Bit
with Masking Operation (New and Old Mask)
CAS-before- RAS, RAS-only and Hidden Refresh
Common Data |/O Using three state RAM Output Control
AIll Inputs and Outputs TTL Compatible
Refresh : 512 Cycle/8ms
Single +5V土10% Supply Voltage (KM421 6C256)
Single +3.3土10% Supply Voltage (KM421 6V256)
Plastic 64-Pin 525mil SSOP (0.8mm pin pitch)