E28F002BX-T120

Product Details

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Intel’s 2-Mbit Flash Memory Family is an extension of the Boot Block Architecture which includes block-selective erasure, automated write and erase operations and standard microprocessor interface. The 2-Mbit Flash Memory Family enhances the Boot Block Architecture by adding more density and blocks, x8/x16 input/output control, very high speed, low power, an industry-standard ROM compatible pinout and surface mount packaging. The 2-Mbit flash family allows for an easy upgrade to Intel’s 4-Mbit Boot Block Flash Memory Family.

■ x8/x16 Input/Output Architecture

— 28F200BX-T, 28F200BX-B
— For High Performance and High Integration 16-bit and 32-bit CPUs
■ x8-only Input/Output Architecture
— 28F002BX-T 28F002BX-B
— For Space Constrained 8-bit Applications
■ Upgradeable to Intel’s SmartVoltage Products
■ Optimized High-Density Blocked Architecture
— One 16-KB Protected Boot Block
— Two 8-KB Parameter Blocks
— One 96-KB Main Block
— One 128 KB Main Block
— Top or Bottom Boot Locations
■ Extended Cycling Capability
— 100,000 Block Erase Cycles
■ Automated Word/Byte Write and Block Erase
— Command User Interface
— Status Registers
— Erase Suspend Capability
■ SRAM-Compatible Write Interface
■ Automatic Power Savings Feature
— 1 mA Typical ICC Active Current in Static Operation
■ Hardware Data Protection Feature
— Erase/Write Lockout during Power Transitions
■ Very High-Performance Read
— 60/80/120 ns Maximum Access Time
— 30/40/40 ns Maximum Output Enable Time
■ Low Power Consumption
— 20 mA Typical Active Read Current
■ Reset/Deep Power-Down Input
— 0.2 μA ICC Typical
— Acts as Reset for Boot Operations
■ Extended Temperature Operation
— -40°C to +85°C
■ Write Protection for Boot Block
■ Industry Standard Surface Mount Packaging
— 28F200BX: JEDEC ROM Compatible
44-Lead PSOP
56-Lead TSOP
— 28F002BX: 40-Lead TSOP
■ 12V Word/Byte Write and Block Erase
— VPP = 12V ±5% Standard
— VPP =12V ±10% Option
■ ETOXTM III Flash Technology
— 5V Read
■ Independent Software Vendor Support