K524G2GACB-A050

GENERAL DESCRIPTION

The K524G2GACB is a Multi Chip Package Memory which combines 4Gbit NAND Flash Memory an 2Gbit DDR synchronous high data rate Dynamic RAM.
NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be performed in typical 250µs on the (1K+32)Word page and an erase operation can be performed in typical 2ms on a (64K+2K)Word block. Data in the data register can be read out at 42ns cycle time per Word. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the device′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The device is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
In 2Gbit Mobile DDR, Synchronous design make a device controlled precisely with the use of system clock. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

FEATURES

• Operating Temperature : -25°C ~ 85°C
• Package : 137-ball FBGA Type - 10.5 x 13 x 1.2mmt, 0.8mm pitch

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• Voltage Supply : 1.7V ~ 1.95V
• Organization
- Memory Cell Array :
(256M + 8M) x 16bit for 4Gb
(512M + 16M) x 16bit for 8Gb DDP
- Data Register : (1K + 32) x 16bit
• Automatic Program and Erase
- Page Program : (1K + 32)Word
- Block Erase : (64K + 2K)Word
• Page Read Operation
- Page Size : (1K + 32)Word
- Random Read : 40µs(Max.)
- Serial Access : 42ns(Min.)
• Fast Write Cycle Time
- Page Program time : 250µs(Typ.)
- Block Erase Time : 2ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data
- Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
-Endurance : 100K Program/Erase Cycles with 1bit/256Word ECC for x16
• Command Driven Operation
• Unique ID for Copyright Protection

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• VDD/VDDQ = 1.8V/1.8V
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• Differential clock inputs(CK and CK)
• MRS cycle with address key programs
- CAS Latency ( 3 )
- Burst Length ( 2, 4, 8, 16 )
- Burst Type (Sequential & Interleave)
• EMRS cycle with address key programs
- Partial Array Self Refresh ( Full, 1/2, 1/4 Array )
- Output Driver Strength Control ( Full, 1/2, 1/4, 1/8, 3/4, 3/8, 5/8, 7/8 )
• Internal Temperature Compensated Self Refresh
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK).
• Data I/O transactions on both edges of data strobe, DM for masking.
• Edge aligned data output, center aligned data input.
• No DLL; CK to DQS is not synchronized.
• DM0 - DM3 for write masking only.
• Auto refresh duty cycle
- 7.8us
• Clock stop capability