N25Q512A13GSF40F

** N25Q512A13GSF40F introduction **

N25Q512A13GSF40F is a high-performance flash memory device in memory ICs, developed by Micron Technology Inc. The N25Q512A13GSF40F uses FLASH-NOR technology and a high-speed SPI-compatible memory interface to provide temporary or permanent storage for multiple areas of temporary or permanent storage.

** N25Q512A13GSF40F Features **

• Stacked device (two 256Mb die)
• SPI-compatible serial bus interface
• Double transfer rate (DTR) mode
• 2.7–3.6V single supply voltage
• 108 MHz (MAX) clock frequency supported for all protocols in single transfer rate (STR) mode
• 54 MHz (MAX) clock frequency supported for all protocols in DTR mode
• Dual/quad I/O instruction provides increased throughput up to 54 MB/s
• Supported protocols
– Extended SPI, dual I/O, and quad I/O
– DTR mode supported on all
• Execute-in-place (XIP) mode for all three protocols
– Configurable via volatile or nonvolatile registers
– Enables memory to work in XIP mode directly after power-on
• PROGRAM/ERASE SUSPEND operations
• Available protocols
– Available READ operations
– Quad or dual output fast read
– Quad or dual I/O fast read
• Flexible to fit application
– Configurable number of dummy cycles
– Output buffer configurable
• Software reset
• Additional reset pin for selected part numbers 1
• 3-byte and 4-byte addressability mode supported
• 64-byte, user-lockable, one-time programmable (OTP) dedicated area
• Erase capability
– Subsector erase 4KB uniform granularity blocks
– Sector erase 64KB uniform granularity blocks
– Single die erase
• Write protection
– Software write protection applicable to every 64KB sector via volatile lock bit
– Hardware write protection: protected area size defined by five nonvolatile bits (BP0, BP1, BP2,BP3, and TB)
– Additional smart protections, available upon request
• Electronic signature
– JEDEC-standard 2-byte signature (BA20h)
– Unique ID code (UID): 17 read-only bytes, including: Two additional extended device ID bytes to identify device factory options; and customized factory data (14 bytes)
• Minimum 100,000 ERASE cycles per sector
• More than 20 years data retention
• Packages – JEDEC-standard, all RoHS-compliant
– V-PDFN-8/8mm x 6mm (also known as SON, DFPN, MLP, MLF)
– SOP2-16/300mils (also known as SO16W, SO16-Wide, SOIC-16)
– T-PBGA-24b05/6mm x 8mm (also known as TBGA24)

** N25Q512A13GSF40F application: **

• Telecommunication
• Data centers
• Medical technology
• Computer or microcomputers
• Microcontrollers