CY7C1440AV33-250AXC

Functional Description[1]

The CY7C1440AV33/CY7C1442AV33/CY7C1446AV33 SRAM integrates 1,048,576 x 36, 2,097,152 x 18 and 524,288 x 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge- triggered Clock Input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining Chip Enable (CE1), depth-expansion Chip Enables (CE2 and CE3[2]), Burst Control inputs (ADSC, ADSP, and ADV), Write Enables (BWX and BWE), and Global Write (GW). Asynchronous inputs include the Output Enable (OE) and the ZZ pin.

Features

• Supports bus operation up to 250 MHz
• Available speed grades are 250, 200,167 MHz
• Registered inputs and outputs for pipelined operation
• 3.3V core power supply
• 2.5V/3.3V I/O operation
• Fast clock-to-output times
— 2.6 ns (for 250-MHz device)
— 3.2 ns (for 200-MHz device)
— 3.4 ns (for 167-MHz device)
• Provide high-performance 3-1-1-1 access rate
• User-selectable burst counter supporting Intel® Pentium® interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self-timed writes
• Asynchronous output enable
• Single Cycle Chip Deselect
• Offered in JEDEC-standard 100-pin TQFP, 165-Ball fBGA and 209-Ball fBGA packages
• Also available in lead-free packages
• IEEE 1149.1 JTAG-Compatible Boundary Scan
• “ZZ” Sleep Mode Option